Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC • General-purpose inverters Des

封装/外壳：TO-220-3 包装：管件 描述：IGBT TRENCH 650V 40A TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

沟槽栅场截止IGBT，M系列，650 V、20 A，低损耗

Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT

Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC • General-purpose inverters Desc

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.55V@IC= 15A · High Current Capability · High Input Impedance · Low thermal resistance APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter