20 A, 600 V fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 40A 130W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT

文件：289.55 Kbytes Page：14 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 40A 130W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

20 A, 600 V fast IGBT with Ultrafast diode

文件：535.58 Kbytes Page：15 Pages

19 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ High frequency operation Applications ■ High frequency motor drives ■ SMPS and PFC i

19 A - 600 V - very fast IGBT

文件：511.88 Kbytes Page：18 Pages

20 A - 600 V - short circuit rugged IGBT

文件：524.51 Kbytes Page：15 Pages

20 A - 600 V - short circuit rugged IGBT

文件：586.14 Kbytes Page：17 Pages

N-channel 600V - 9A - TO-220FP Very fast PowerMESH TM IGBT

文件：276.6 Kbytes Page：14 Pages