Trench gate field-stop IGBT M series, 650 V, 15 A low loss

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封装/外壳：TO-220-3 包装：管件 描述：TRENCH GATE FIELD-STOP IGBT M SE 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC= 15A · High Current Capability · High Input Impedance · Low thermal resistance APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

Trench gate field-stop IGBT M series, 650 V, 15 A low loss

文件：1.08019 Mbytes Page：19 Pages

Trench gate field-stop IGBT M series, 650 V 15 A low loss

文件：910.69 Kbytes Page：15 Pages