14 A - 600 V - short circuit rugged IGBT

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封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 11A 33W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short circuit rugged

14A, 600V N-CHANNEL POWER MOSFET

FEATURES * RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness

14A, 600V N-CHANNEL POWER MOSFET

 FEATURES * RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =14A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.49Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

Drain Current ID= 14A@ TC=25C

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N-Channel Enhancement Mode MOSFET

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