STGD10NC60KDT4价格

参考价格:¥3.5873

型号:STGD10NC60KDT4 品牌:STMicroelectronics 备注:这里有STGD10NC60KDT4多少钱,2025年最近7天走势,今日出价,今日竞价,STGD10NC60KDT4批发/采购报价,STGD10NC60KDT4行情走势销售排行榜,STGD10NC60KDT4报价。
型号 功能描述 生产厂家&企业 LOGO 操作
STGD10NC60KDT4

10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

STMICROELECTRONICS

意法半导体

STGD10NC60KDT4

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 600V 20A 62W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

STGD10NC60KDT4

10 A, 600 V short-circuit rugged IGBT

文件:613.22 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

STGD10NC60KDT4

N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT

文件:467.28 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

STMICROELECTRONICS

意法半导体

10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

文件:526.13 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

10 A, 600 V short-circuit rugged IGBT

文件:613.22 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

STGD10NC60KDT4产品属性

  • 类型

    描述

  • 型号

    STGD10NC60KDT4

  • 功能描述

    IGBT 晶体管 N Ch 600V 10A

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-14 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
5350
原厂直销,现货供应,账期支持!
STM
24+/25+
DPAK(TO-252)
2500
原装正品现货库存价优
ST/意法
2447+
TO252
9657
只做原装正品假一赔十为客户做到零风险!!
STMICROELECTRONICS
21+
NA
2500
只做原装,一定有货,不止网上数量,量多可订货!
STM
2018+
26976
代理原装现货/特价热卖!
ST/意法半导体
23+
DPAK-3
12700
买原装认准中赛美
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST全系列
25+23+
TO-252
26163
绝对原装正品全新进口深圳现货
ST/意法半导体
21+
DPAK-3
8860
只做原装,质量保证
ST/意法半导体
24+
DPAK-3
6000
全新原装深圳仓库现货有单必成

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