STG价格

参考价格:¥2.1466

型号:STG3155DTR 品牌:STMicroelectronics 备注:这里有STG多少钱,2024年最近7天走势,今日出价,今日竞价,STG批发/采购报价,STG行情走势销售排行榜,STG报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Dual supply, quad SPDT switch, 1.8 V and 3.3 V logic input compatible

Features •Wideoperatingvoltagerange –Totalvoltage:2.7Vto15.5V –Positivesupply:2.7Vto5.5V –Negativesupply:downto-12V •Breakbeforemakefeature •Quadchannelwithonecontrolpinforallswitches •Inhibitpintosettheswicthesinhighimpedance •Benefits –GaN

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing

Features •10μsofshort-circuitwithstandingtime •LowVCE(sat)=1.85V(typ.)@IC=15A •PositiveVCE(sat)temperaturecoefficient •Tightparameterdistribution •Maximumjunctiontemperature:TJ=175°C Applications •Industrialmotorcontrol •Industrialdrives •Solarinver

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing

Features •10μsofshort-circuitwithstandtime •LowVCE(sat)=1.85V(typ.)atIC=15A •PositiveVCE(sat)temperaturecoefficient •Tightparameterdistribution •Minimizedjunctiontemperature:TJ=175°C Applications •Motorcontrol •Industrialdrives •PFC •UPS •Solar •

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing

Features •AEC-Q101qualified •Low-lossseriesIGBT •LowVCE(sat)=1.52V(typ.)atIC=200A •PositiveVCE(sat)temperaturecoefficient •Tightparameterdistribution •Maximumjunctiontemperature:TJ=175°C Applications •EV/HEVtractioninverters Description Thisdeviceis

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing

Features •AEC-Q101qualified •Low-lossseriesIGBT •LowVCE(sat)=1.55V(typ.)atIC=200A •PositiveVCE(sat)temperaturecoefficient •Tightparameterdistribution •Maximumjunctiontemperature:TJ=175°C •6μsminimumshort-circuitwithstandingtimeatTJ=150C Descriptio

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. ●ESDProtected.

Samhop

三合微科

Samhop

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

Samhop

三合微科

Samhop

Dual P-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.

Samhop

三合微科

Samhop

Low voltage 0.5廓 Max single SPDT switch with break-before-make feature

Description TheSTG3155isahigh-speedCMOSlowvoltagesingleanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 0.5廓 Max single SPDT switch with break-before-make feature

Description TheSTG3155isahigh-speedCMOSlowvoltagesingleanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

Description TheSTG3157isahigh-speedCMOSanalogSPDT(single-poledouble-throw)switchor2:1multiplexer/demultiplexerbusswitchmanufacturedusingsilicongateCMOStechnology.Itisdesignedtooperatefroma1.65Vto5.5Vsupply,makingthedeviceidealforportableapplications. Feat

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

Description TheSTG3157isahigh-speedCMOSanalogSPDT(single-poledouble-throw)switchor2:1multiplexer/demultiplexerbusswitchmanufacturedusingsilicongateCMOStechnology.Itisdesignedtooperatefroma1.65Vto5.5Vsupply,makingthedeviceidealforportableapplications. Feat

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 1廓 max single SPDT switch with break-before-make feature

Description TheSTG3159isahigh-speedCMOSlowvoltagesingleanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 1廓 max single SPDT switch with break-before-make feature

Description TheSTG3159isahigh-speedCMOSlowvoltagesingleanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 0.9廓 max dual SPST switch with break before make feature

Description TheSTG3384isahigh-speedCMOSlowvoltagedualanalogS.P.S.T.(SinglePoleSingleThrow)SWITCHfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportable. ThenINinputsareprovidedtocontroltheswitches.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 0.9廓 max dual SPST switch with break before make feature

Description TheSTG3384isahigh-speedCMOSlowvoltagedualanalogS.P.S.T.(SinglePoleSingleThrow)SWITCHfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportable. ThenINinputsareprovidedtocontroltheswitches.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage dual SP4T switch

Description TheSTG3482isahigh-speedCMOSlowvoltagedualanalogSP4T(singlepolefourthrow)switchor4:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65to4.3V,makingthisdeviceidealforportableapplications. Feature

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage dual SP4T switch

Description TheSTG3482isahigh-speedCMOSlowvoltagedualanalogSP4T(singlepolefourthrow)switchor4:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65to4.3V,makingthisdeviceidealforportableapplications. Feature

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing

Features •10μsofshort-circuitwithstandtime •LowVCE(sat)=1.85V(typ.)@IC=35A •PositiveVCE(sat)temperaturecoefficient •Tightparameterdistribution •Maximumjunctiontemperature:TJ=175°C Applications •Motorcontrol •Industrialdrives •PFC •UPS •Solar •Ge

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5/0.8??MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3680isanhigh-speedCMOSDUALANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHorDUAL2:1Multiplexer/DemultiplexerBusSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■HIG

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5/0.8??MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3680isanhigh-speedCMOSDUALANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHorDUAL2:1Multiplexer/DemultiplexerBusSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■HIG

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage high bandwidth dual SPDT switch

Description TheSTG3682isahigh-speedCMOSlowvoltagedualanalogS.P.D.T.(SinglePoleDualThrow)Switchor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage high bandwidth dual SPDT switch

Description TheSTG3682isahigh-speedCMOSlowvoltagedualanalogS.P.D.T.(SinglePoleDualThrow)Switchor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3684isanhigh-speedCMOSDUALANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHorDUAL2:1Multiplexer/DemultiplexerBusSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■HIG

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 0.5 廓 max dual SPDT switch with break-before-make

Description TheSTG3684Aisahigh-speedCMOSdualanalogSPDT(single-poledual-throw)switchordual2:1multiplexer/demultiplexerbusswitchfabricatedusingsilicongateC2MOStechnology.Designedtooperatefrom1.65to4.3V,thisdeviceisidealforportableapplications. Features ■Ul

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 0.5 廓 max dual SPDT switch with break-before-make

Description TheSTG3684Aisahigh-speedCMOSdualanalogSPDT(single-poledual-throw)switchordual2:1multiplexer/demultiplexerbusswitchfabricatedusingsilicongateC2MOStechnology.Designedtooperatefrom1.65to4.3V,thisdeviceisidealforportableapplications. Features ■Ul

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 0.5 廓 max dual SPDT switch with break-before-make

Description TheSTG3684Aisahigh-speedCMOSdualanalogSPDT(single-poledual-throw)switchordual2:1multiplexer/demultiplexerbusswitchfabricatedusingsilicongateC2MOStechnology.Designedtooperatefrom1.65to4.3V,thisdeviceisidealforportableapplications. Features ■Ul

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3684isanhigh-speedCMOSDUALANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHorDUAL2:1Multiplexer/DemultiplexerBusSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■HIG

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH, SINGLE ENABLE WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3685isanhigh-speedCMOSDUALANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHorDUAL2:1Multiplexer/DemultiplexerBusSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.4Vto4.3V,makingthisdeviceidealforportableapplications. ■HIGH

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH, SINGLE ENABLE WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3685isanhigh-speedCMOSDUALANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHorDUAL2:1Multiplexer/DemultiplexerBusSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.4Vto4.3V,makingthisdeviceidealforportableapplications. ■HIGH

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low Voltage 0.9廓 max dual SPDT Switch with break-before-make feature

Description TheSTG3689isahigh-speedCMOSlowvoltagedualanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. Fea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low Voltage 0.9廓 max dual SPDT Switch with break-before-make feature

Description TheSTG3689isahigh-speedCMOSlowvoltagedualanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. Fea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3690isanhigh-speedCMOSLOWVOLTAGEQUADANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto3.6V,makingthisdeviceidealforportableapplications ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3690isanhigh-speedCMOSLOWVOLTAGEQUADANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto3.6V,makingthisdeviceidealforportableapplications ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3690isanhigh-speedCMOSLOWVOLTAGEQUADANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto3.6V,makingthisdeviceidealforportableapplications ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage high bandwidth quad SPDT switch

Description TheSTG3692isahigh-speedCMOSlowvoltagequadanalogSPDT(singlepoledualthrow)switchor2:1multiplexer/demultiplexerswitchdevelopedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. Featu

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage high bandwidth quad SPDT switch

Description TheSTG3692isahigh-speedCMOSlowvoltagequadanalogSPDT(singlepoledualthrow)switchor2:1multiplexer/demultiplexerswitchdevelopedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. Featu

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage high bandwidth Quad SPDT switch

Description TheSTG3693isahigh-speedCMOSlowvoltagequadanalogSPDT(singlepoledualthrow)switchor2:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto5V,makingthisdeviceidealforportableapplications. Featur

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage high bandwidth Quad SPDT switch

Description TheSTG3693isahigh-speedCMOSlowvoltagequadanalogSPDT(singlepoledualthrow)switchor2:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto5V,makingthisdeviceidealforportableapplications. Featur

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5??MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3699isanhigh-speedCMOSLOWVOLTAGEQUADANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3699Aisahigh-speedCMOSlowvoltagequadanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■H

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3699Aisahigh-speedCMOSlowvoltagequadanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■H

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low Voltage 0.5ohm Max, Quad SPDT Switch with break-before-make feature

Description TheSTG3699Bisahigh-speedCMOSlowvoltagequadanalogSPDT(single-poledoublethrow)switchor2:1multiplexer/demultiplexerswitchfabricatedusingsilicongateC2MOStechnology.Designedtooperatefrom1.65to4.3V,thisdeviceisidealforportableapplications. Features ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low Voltage 0.5ohm Max, Quad SPDT Switch with break-before-make feature

Description TheSTG3699Bisahigh-speedCMOSlowvoltagequadanalogSPDT(single-poledoublethrow)switchor2:1multiplexer/demultiplexerswitchfabricatedusingsilicongateC2MOStechnology.Designedtooperatefrom1.65to4.3V,thisdeviceisidealforportableapplications. Features ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5??MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3699isanhigh-speedCMOSLOWVOLTAGEQUADANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 0.5??MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3699isanhigh-speedCMOSLOWVOLTAGEQUADANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low Voltage 1.0??Max Dual SP3T Switch With Break Before Make Feature

Description TheSTG3856isahigh-speedCMOSlowvoltagedualanalogSP3T(singlepoletriplethrow)switchordual3:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplicatio

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 1.0 max dual SP3T switch with break-before-make feature

Description TheSTG3856isahigh-speedCMOSlowvoltagedualanalogSP3T(singlepoletriplethrow)switchordual3:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplicatio

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage 1.0 max dual SP3T switch with break-before-make feature

Description TheSTG3856isahigh-speedCMOSlowvoltagedualanalogSP3T(singlepoletriplethrow)switchordual3:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplicatio

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Tri-phase inverter IGBT - SEMITOP®3 module

Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecoveryantiparalleldiode ■Frequencyoperationupto40kHz ■Newgenerationproductswithtighter parameterdistribution ■Onescrewmounting ■Compactdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing

Features •Maximumjunctiontemperature:TJ=175°C •10μsofshort-circuitwithstandtime •LowVCE(sat)=1.7V(typ.)@IC=50A •Tightparameterdistribution •PositiveVCE(sat)temperaturecoefficient Applications •Industrialmotorcontrol •Industrialdrives •Solarinverters

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage dual SPDT switch with negative rail capability

Features ■Distortion-freenegativesignalthroughput downtoVCC-5.5V ■Wideoperatingvoltagerange: VCC(opr)=1.65to4.5Vsinglesupply ■Ultralowpowerdissipation: ICC=0.2μA(max.)atTA=85°C ■LowONresistance: RON=0.5Ω(max.TA=25°C)atVCC=3.6V ■4.3Vtole

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage dual SPDT switch with negative rail capability

Features ■Distortion-freenegativesignalthroughput downtoVCC-5.5V ■Wideoperatingvoltagerange: VCC(opr)=1.65to4.5Vsinglesupply ■Ultralowpowerdissipation: ICC=0.2μA(max.)atTA=85°C ■LowONresistance: RON=0.5Ω(max.TA=25°C)atVCC=3.6V ■4.3Vtole

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Low voltage dual SPDT switch with negative rail capability

Features ■Distortion-freenegativesignalthroughput downtoVCC-5.5V ■Wideoperatingvoltagerange: VCC(opr)=1.65to4.5Vsinglesupply ■Ultralowpowerdissipation: ICC=0.2μA(max.)atTA=85°C ■LowONresistance: RON=0.5Ω(max.TA=25°C)atVCC=3.6V ■4.3Vtole

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing

Features •Maximumjunctiontemperature:TJ=175°C •Highspeedswitchingseries •Minimizedtailcurrent •Verylowsaturationvoltage:VCE(sat)=1.65V(typ)@IC=60A •Safeparalleling •Tightparameterdistribution Applications •Solar •Welding •Highfrequencyconverter

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION TheSTG719isanhighspeedSPDTCMOSSWITCHfrabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.8Vto5.5V,makingthisdeviceidealforportableapplications.Itoffers4ΩON-ResistanceMaxat5V25°C.Additionalkeyfeaturesarefastswitchingspeed(tON=

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION TheSTG719isanhighspeedSPDTCMOSSWITCHfrabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.8Vto5.5V,makingthisdeviceidealforportableapplications.Itoffers4ΩON-ResistanceMaxat5V25°C.Additionalkeyfeaturesarefastswitchingspeed(tON=

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Dual N-Channel Enhancement Mode Field Effect Transistor

SurfaceMountPackage. FEATURES SuperhighdensecelldesignforlowRDS(ON). Ruggedandreliable.

Samhop

三合微科

Samhop

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

Samhop

三合微科

Samhop

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.

Samhop

三合微科

Samhop

STG产品属性

  • 类型

    描述

  • 型号

    STG

  • 制造商

    FACOM

  • 功能描述

    FILE SET 5PC

  • 制造商

    FACOM

  • 功能描述

    FILE SET, 5PC

更新时间:2024-6-6 18:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
22+
20-QFN
12000
专注工厂库存代销,价格优势f
ST
0016+
PLCC-44
780
Norsat
23+
模块
400
ST
23+
PLCC44
4500
全新原装、诚信经营、公司现货销售!
ST
PLCC
36900
集团化配单-有更多数量-免费送样-原包装正品现货-正规
ST
23+
PLCC
19526
ST/意法
2022
PLCC44
80000
原装现货,OEM渠道,欢迎咨询
ST
23+
PLCC44
2800
绝对全新原装!现货!特价!请放心订购!
ST/意法
21+
PLCC
7540
只做原装正品假一赔十!正规渠道订货!
ST/意法
2046+
PLCC44
9852
只做原装正品现货!或订货假一赔十!

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