D-Band Noise Figure and Gain Test Extenders

FEATURES Full Band Coverage Precision Calibrated ENR Great ENR and Gain Flatness APPLICATIONS Test Lab Instrumentations

F-Band Noise Figure and Gain Test Extenders

FEATURES Full Band Coverage Precision Calibrated ENR Great ENR and Gain Flatness APPLICATIONS Test Lab Instrumentations

Dual supply, quad SPDT switch, 1.8 V and 3.3 V logic input compatible

Features • Wide operating voltage range – Total voltage: 2.7 V to 15.5 V – Positive supply: 2.7 V to 5.5 V – Negative supply: down to -12 V • Break before make feature • Quad channel with one control pin for all switches • Inhibit pin to set the swicthes in high impedance • Benefits – GaN

E-Band Noise Figure and Gain Test Extenders

FEATURES Full Band Coverage Precision Calibrated ENR Great ENR and Gain Flatness APPLICATIONS Test Lab Instrumentations

Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing

Features • 10 μs of short-circuit withstanding time • Low VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C Applications • Industrial motor control • Industrial drives • Solar inver

1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing

Features • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.85 V (typ.) at IC = 15 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Minimized junction temperature: TJ = 175 °C Applications • Motor control • Industrial drives • PFC • UPS • Solar •

V-Band Noise Figure and Gain Test Extenders

FEATURES Full Band Coverage Precision Calibrated ENR Great ENR and Gain Flatness APPLICATIONS Test Lab Instrumentations

U-Band Noise Figure and Gain Test Extenders

FEATURES Full Band Coverage Precision Calibrated ENR Great ENR and Gain Flatness APPLICATIONS Test Lab Instrumentations

Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing

Features • AEC-Q101 qualified • Low-loss series IGBT • Low VCE(sat) = 1.52 V (typ.) at IC = 200 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C Applications • EV/HEV traction inverters Description This device is

Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing

Features • AEC-Q101 qualified • Low-loss series IGBT • Low VCE(sat) = 1.55 V (typ.) at IC = 200 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C • 6 μs minimum short-circuit withstanding time at TJ = 150 C Descriptio

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

Q-Band Noise Figure and Gain Test Extenders

FEATURES Full Band Coverage Precision Calibrated ENR Great ENR and Gain Flatness APPLICATIONS Test Lab Instrumentation

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Dual P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

Ka-Band Noise Figure and Gain Test Extenders

FEATURES Full Band Coverage Precision Calibrated ENR Great ENR and Gain Flatness APPLICATIONS Test Lab Instrumentations

Low voltage 0.5廓 Max single SPDT switch with break-before-make feature

Description The STG3155 is a high-speed CMOS low voltage single analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer /Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications.

Low voltage 0.5廓 Max single SPDT switch with break-before-make feature

Description The STG3155 is a high-speed CMOS low voltage single analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer /Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications.

LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

Description The STG3157 is a high-speed CMOS analog SPDT (single-pole double-throw) switch or 2:1 multiplexer/demultiplexer bus switch manufactured using silicon gate CMOS technology. It is designed to operate from a 1.65 V to 5.5 V supply, making the device ideal for portable applications. Feat

LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

Description The STG3157 is a high-speed CMOS analog SPDT (single-pole double-throw) switch or 2:1 multiplexer/demultiplexer bus switch manufactured using silicon gate CMOS technology. It is designed to operate from a 1.65 V to 5.5 V supply, making the device ideal for portable applications. Feat

Low voltage 1廓 max single SPDT switch with break-before-make feature

Description The STG3159 is a high-speed CMOS low voltage single analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer /Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications.

Low voltage 1廓 max single SPDT switch with break-before-make feature

Description The STG3159 is a high-speed CMOS low voltage single analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer /Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications.

Low voltage 0.9廓 max dual SPST switch with break before make feature

Description The STG3384 is a high-speed CMOS low voltage dual analog S.P.S.T. (Single Pole Single Throw) SWITCH fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable. The nIN inputs are provided to control the switches.

Low voltage 0.9廓 max dual SPST switch with break before make feature

Description The STG3384 is a high-speed CMOS low voltage dual analog S.P.S.T. (Single Pole Single Throw) SWITCH fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable. The nIN inputs are provided to control the switches.

Low voltage dual SP4T switch

Description The STG3482 is a high-speed CMOS low voltage dual analog SP4T (single pole four throw) switch or 4:1 multiplexer/demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 to 4.3 V, making this device ideal for portable applications. Feature

Low voltage dual SP4T switch

Description The STG3482 is a high-speed CMOS low voltage dual analog SP4T (single pole four throw) switch or 4:1 multiplexer/demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 to 4.3 V, making this device ideal for portable applications. Feature

1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing

Features • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C Applications • Motor control • Industrial drives • PFC • UPS • Solar • Ge

LOW VOLTAGE 0.5/0.8??MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3680 is an high-speed CMOS DUAL ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or DUAL 2:1 Multiplexer/Demultiplexer Bus Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. ■ HIG

LOW VOLTAGE 0.5/0.8??MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3680 is an high-speed CMOS DUAL ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or DUAL 2:1 Multiplexer/Demultiplexer Bus Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. ■ HIG

Low voltage high bandwidth dual SPDT switch

Description The STG3682 is a high-speed CMOS low voltage dual analog S.P.D.T. (Single Pole Dual Throw) Switch or 2:1 Multiplexer /Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. Fe

Low voltage high bandwidth dual SPDT switch

Description The STG3682 is a high-speed CMOS low voltage dual analog S.P.D.T. (Single Pole Dual Throw) Switch or 2:1 Multiplexer /Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. Fe

LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3684 is an high-speed CMOS DUAL ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or DUAL 2:1 Multiplexer/Demultiplexer Bus Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. ■ HIG

Low voltage 0.5 廓 max dual SPDT switch with break-before-make

Description The STG3684A is a high-speed CMOS dual analog SPDT (single-pole dual-throw) switch or dual 2:1 multiplexer/demultiplexer bus switch fabricated using silicon gate C2MOS technology. Designed to operate from 1.65 to 4.3 V, this device is ideal for portable applications. Features ■ Ul

Low voltage 0.5 廓 max dual SPDT switch with break-before-make

Description The STG3684A is a high-speed CMOS dual analog SPDT (single-pole dual-throw) switch or dual 2:1 multiplexer/demultiplexer bus switch fabricated using silicon gate C2MOS technology. Designed to operate from 1.65 to 4.3 V, this device is ideal for portable applications. Features ■ Ul

Low voltage 0.5 廓 max dual SPDT switch with break-before-make

Description The STG3684A is a high-speed CMOS dual analog SPDT (single-pole dual-throw) switch or dual 2:1 multiplexer/demultiplexer bus switch fabricated using silicon gate C2MOS technology. Designed to operate from 1.65 to 4.3 V, this device is ideal for portable applications. Features ■ Ul

LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3684 is an high-speed CMOS DUAL ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or DUAL 2:1 Multiplexer/Demultiplexer Bus Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. ■ HIG

LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH, SINGLE ENABLE WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3685 is an high-speed CMOS DUAL ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or DUAL 2:1 Multiplexer/Demultiplexer Bus Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.4V to 4.3V, making this device ideal for portable applications. ■ HIGH

LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH, SINGLE ENABLE WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3685 is an high-speed CMOS DUAL ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or DUAL 2:1 Multiplexer/Demultiplexer Bus Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.4V to 4.3V, making this device ideal for portable applications. ■ HIGH

Low Voltage 0.9廓 max dual SPDT Switch with break-before-make feature

Description The STG3689 is a high-speed CMOS low voltage dual analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer/Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. Fea

Low Voltage 0.9廓 max dual SPDT Switch with break-before-make feature

Description The STG3689 is a high-speed CMOS low voltage dual analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer/Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. Fea

LOW VOLTAGE 5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3690 is an high-speed CMOS LOW VOLTAGE QUAD ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or 2:1 Multiplexer/ Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 3.6V, making this device ideal for portable applications ■

LOW VOLTAGE 5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3690 is an high-speed CMOS LOW VOLTAGE QUAD ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or 2:1 Multiplexer/ Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 3.6V, making this device ideal for portable applications ■

LOW VOLTAGE 5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3690 is an high-speed CMOS LOW VOLTAGE QUAD ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or 2:1 Multiplexer/ Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 3.6V, making this device ideal for portable applications ■

Low voltage high bandwidth quad SPDT switch

Description The STG3692 is a high-speed CMOS low voltage quad analog SPDT (single pole dual throw) switch or 2:1 multiplexer /demultiplexer switch developed in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 4.3 V, making this device ideal for portable applications. Featu

Low voltage high bandwidth quad SPDT switch

Description The STG3692 is a high-speed CMOS low voltage quad analog SPDT (single pole dual throw) switch or 2:1 multiplexer /demultiplexer switch developed in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 4.3 V, making this device ideal for portable applications. Featu

Low voltage high bandwidth Quad SPDT switch

Description The STG3693 is a high-speed CMOS low voltage quad analog SPDT (single pole dual throw) switch or 2:1 multiplexer /demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 5 V, making this device ideal for portable applications. Featur

Low voltage high bandwidth Quad SPDT switch

Description The STG3693 is a high-speed CMOS low voltage quad analog SPDT (single pole dual throw) switch or 2:1 multiplexer /demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 5 V, making this device ideal for portable applications. Featur

LOW VOLTAGE 0.5??MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3699 is an high-speed CMOS LOW VOLTAGE QUAD ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or 2:1 Multiplexer/Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. ■

LOW VOLTAGE 0.5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3699A is a high-speed CMOS low voltage quad analog S.P.D.T. (Single PoleDual Throw) switch or 2:1 Multiplexer/Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. ■ H

LOW VOLTAGE 0.5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3699A is a high-speed CMOS low voltage quad analog S.P.D.T. (Single PoleDual Throw) switch or 2:1 Multiplexer/Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. ■ H

Low Voltage 0.5ohm Max, Quad SPDT Switch with break-before-make feature

Description The STG3699B is a high-speed CMOS low voltage quad analog SPDT (single-pole doublethrow) switch or 2:1 multiplexer/demultiplexer switch fabricated using silicon gate C2MOS technology. Designed to operate from 1.65 to 4.3 V, this device is ideal for portable applications. Features ■

Low Voltage 0.5ohm Max, Quad SPDT Switch with break-before-make feature

Description The STG3699B is a high-speed CMOS low voltage quad analog SPDT (single-pole doublethrow) switch or 2:1 multiplexer/demultiplexer switch fabricated using silicon gate C2MOS technology. Designed to operate from 1.65 to 4.3 V, this device is ideal for portable applications. Features ■

LOW VOLTAGE 0.5??MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3699 is an high-speed CMOS LOW VOLTAGE QUAD ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or 2:1 Multiplexer/Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. ■

LOW VOLTAGE 0.5??MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION The STG3699 is an high-speed CMOS LOW VOLTAGE QUAD ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or 2:1 Multiplexer/Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. ■

Low Voltage 1.0??Max Dual SP3T Switch With Break Before Make Feature

Description The STG3856 is a high-speed CMOS low voltage dual analog SP3T (single pole triple throw) switch or dual 3 : 1 multiplexer /demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 4.3 V, making this device ideal for portable applicatio

Low voltage 1.0 max dual SP3T switch with break-before-make feature

Description The STG3856 is a high-speed CMOS low voltage dual analog SP3T (single pole triple throw) switch or dual 3 : 1 multiplexer /demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 4.3 V, making this device ideal for portable applicatio

Low voltage 1.0 max dual SP3T switch with break-before-make feature

Description The STG3856 is a high-speed CMOS low voltage dual analog SP3T (single pole triple throw) switch or dual 3 : 1 multiplexer /demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 4.3 V, making this device ideal for portable applicatio

Tri-phase inverter IGBT - SEMITOP®3 module

Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Frequency operation up to 40 kHz ■ New generation products with tighter parameter distribution ■ One screw mounting ■ Compact design

Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing

Features • Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient Applications • Industrial motor control • Industrial drives • Solar inverters

Low voltage dual SPDT switch with negative rail capability

Features ■ Distortion-free negative signal throughput down to VCC - 5.5 V ■ Wide operating voltage range: VCC (opr) = 1.65 to 4.5 V single supply ■ Ultra low power dissipation: ICC = 0.2 μA (max.) at TA = 85 °C ■ Low ON resistance: RON = 0.5 Ω (max. TA = 25 °C) at VCC = 3.6 V ■ 4.3 V tole

Low voltage dual SPDT switch with negative rail capability

Features ■ Distortion-free negative signal throughput down to VCC - 5.5 V ■ Wide operating voltage range: VCC (opr) = 1.65 to 4.5 V single supply ■ Ultra low power dissipation: ICC = 0.2 μA (max.) at TA = 85 °C ■ Low ON resistance: RON = 0.5 Ω (max. TA = 25 °C) at VCC = 3.6 V ■ 4.3 V tole