N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道620 V、1.7 Ohm典型值、3.8 A SuperMESH3(TM) 功率MOSFET，TO-220FP封装

N-Channel 650V (D-S) Power MOSFET

文件：1.07815 Mbytes Page：9 Pages

N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

文件：1.04984 Mbytes Page：18 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.10285 Mbytes Page：9 Pages

N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

文件：1.04984 Mbytes Page：18 Pages