N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth

N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth

N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth

N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET

Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET

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