Three PhaseNeutral Filters For Solar Technology Applications

ThreePhase+NeutralFilters Singlestage Solartechnolotyapplications Compactmodelforsavingspace Lowleakagecurrent

5mm Height ??Lead free leads

文件：203.96 Kbytes Page：2 Pages

N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh™Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

Three PhaseNeutral Filters For Solar Technology Applications

ThreePhase+NeutralFilters Singlestage Solartechnolotyapplications Compactmodelforsavingspace Lowleakagecurrent

Three PhaseNeutral Filters For Solar Technology Applications

ThreePhase+NeutralFilters Singlestage Solartechnolotyapplications Compactmodelforsavingspace Lowleakagecurrent

Three PhaseNeutral Filters For Solar Technology Applications

ThreePhase+NeutralFilters Singlestage Solartechnolotyapplications Compactmodelforsavingspace Lowleakagecurrent

Three PhaseNeutral Filters For Solar Technology Applications

ThreePhase+NeutralFilters Singlestage Solartechnolotyapplications Compactmodelforsavingspace Lowleakagecurrent

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

Three PhaseNeutral Filters For Solar Technology Applications

ThreePhase+NeutralFilters Singlestage Solartechnolotyapplications Compactmodelforsavingspace Lowleakagecurrent

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

COMMON MODE CHOKE

GENERALSPECIFICATION: a)Temp.rise:45°CMax.atratedcurrent b)Storagetemp.:-40°Cto+125°C c)Operatingtemp.:-40°Cto+80°C d)Resistancetosolderheat:260°C.10secs

Three PhaseNeutral Filters For Solar Technology Applications

ThreePhase+NeutralFilters Singlestage Solartechnolotyapplications Compactmodelforsavingspace Lowleakagecurrent

N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

SCHOTTKY RECTIFIER

Features 150CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

SCHOTTKY RECTIFIER

Features 150CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SCHOTTKY RECTIFIER

Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SCHOTTKY RECTIFIER

Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SCHOTTKY RECTIFIER

Features 150CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SCHOTTKY RECTIFIER

Features 150°CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SCHOTTKY RECTIFIER

Features 150°CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SCHOTTKY RECTIFIER

Features 150CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SCHOTTKY RECTIFIER

Features 150°CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SCHOTTKY RECTIFIER

Features 150°CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SCHOTTKY RECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

SCHOTTKY RECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

N-CHANNEL 500V - 0.55??- 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchs

N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220FP package

Description ThisdeviceisanN-channelZener-protected PowerMOSFETdevelopedusing STMicroelectronics’SuperMESH™technology, achievedthroughoptimizationofST’swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesigne

N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220FP package

Description ThisdeviceisanN-channelZener-protected PowerMOSFETdevelopedusing STMicroelectronics’SuperMESH™technology, achievedthroughoptimizationofST’swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesigne

N-channel 600 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected TO-220FP narrow leads

Features ■Extremelyhighdv/dtcapability ■100avalanchetested ■Gatechargeminimized ■Verygoodmanufacturingreliability Application ■Switchingapplications Description TheSuperMESH™seriesisobtainedthroughan extremeoptimizationofST’swellestablished strip-basedPowe

N-channel 500 V, 0.53 廓, 7 A DPAK, TO-220FP, TO-220 MDmesh??II Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh™technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description ThisFDmesh™IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh™Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications

P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET™F6technology, withanewtrenchgatestructure.

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsmadeusingtheSuperMESH3™technologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH™technologycombinedwithanewoptimizedverticalstructure.Theresultingtransistorhasanextremelylowonresistance,superio

N-channel 600 V, 0.550 typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •Verylowturn-offswitchinglosses •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh™ M2enhancedperformance(EP)technology.Thanksto

N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description ThedeviceisanN-channelFDmesh™IIPowerMOSFETthatbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwi

N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuit

N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuit