丝印代码：W51；Dual electronic fuse (eFuse) for 5 V and 12 V rails

Features • 5 V and 12 V channels into one chip • Output over voltage clamp • Fixed current limit : 3 A on 5 V, 4 A on 12 V • Latched-off thermal protection • Input undervoltage lockout • Adjustable output voltage slew rate for each channel • Integrated 40 mΩ Power FETs • SAS disable pin •

Dual electronic fuse (eFuse) for 5 V and 12 V rails

The STEF512PUR is an integrated dual electronic eFuse, designed to protect circuitry on the output from overcurrent and overvoltage events, in those applications requiring hot swap operation and in-rush current control.\n\n The device embeds two independent electronic fuses, one for the 5 V rails an • 5 V and 12 V channels into one chip \n• Output over voltage clamp \n• Fixed current limit : 3 A on 5 V, 4 A on 12 V \n• Latched-off thermal protection \n• Input undervoltage lockout \n• Adjustable output voltage slew rate for each channel \n• Integrated 40 mΩ Power FETs \n• SAS disable pin \n• Cur;

封装/外壳：10-WFQFN 功能：- 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：POWER MANAGEMENT 集成电路（IC） 电流调节/管理

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo