N沟道650 V、0.024 Ohm典型值、88 A MDmesh M5功率MOSFET，ISOTOP封装

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-bas • Very low RDS(on) \n• Higher VDSSrating \n• Higher dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

Higher dv/dt capability

文件：1.00823 Mbytes Page：14 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =29mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 650 V, 0.024 廓 typ., 84 A, MDmesh??V Power MOSFET in TO-247 and TO-247 long leads packages

文件：1.20677 Mbytes Page：15 Pages

N-channel 650 V, 0.024 廓 typ., 84 A, MDmesh??V Power MOSFET in TO-247 and TO-247 long leads packages

文件：1.20677 Mbytes Page：15 Pages