N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N沟道500V 0.070 Ohm 53A ISOTOP POWERMESH II MOSFET

The PowerMESHTM II is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. • TYPICAL RDS(on) = 0.07\n• 100% AVALANCHE TESTED \n• EXTREMELY HIGH dv/dt CAPABILITY \n• GATE CHARGE MINIMIZED \n• NEW HIGH VOLTAGE BENCHMARK;

N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.