GaN晶体管的高压半桥栅极驱动器

STDRIVEG600是用于增强型GaN FET或N沟道功率MOSFET的单芯片半桥栅极驱动器。\n\n 高边部分的设计可承受最高600 V的电压，适用于总线电压高达500 V的设计。\n\n 该器件具有高电流能力、短传播延迟和低至5 V的工作电源电压，其设计用于驱动高速GaN和Si FET。\n\n STDRIVEG600在上下驱动部分均具有UVLO保护，可防止电源开关在低效率或危险条件下运行，并且互锁功能可避免交叉传导情况。\n\n 逻辑输入兼容CMOS/TTL（可低至3.3 V），易于与微控制器和DSP连接。 • dV/dt抗扰度±200 V/ns \n• 驱动器电流能力： \n •1.3/2.4 A 拉/灌 典型值 @25°C，6 V \n •5.5/6 A 拉/灌 典型值 @25°C，15 V \n• 开关栅极驱动器引脚相分离 \n• 45 ns传播延迟，紧密匹配 \n• 具有迟滞的3.3 V，5 V TTL / CMOS输入 \n• 互锁功能 \n• 低边和高边部分的UVLO \n• 关闭功能专用引脚 \n• 超温保护;

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HIGH VOLTAGE HALF-BRIDGE GATE DR 集成电路（IC） 全半桥驱动器

用于GaN晶体管的高压半桥栅极驱动器

The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.\n\n The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. \n\n The device is designed for driving high-speed GaN and • dV/dt immunity ±200 V/ns \n• Driver current capability: \n •1.3/2.4 A source/sink typ @ 25 °C, 6 V \n •5.5/6 A source/sink typ @ 25 °C, 15 V \n• Separated turn on and turn off gate driver pins \n• 45 ns propagation delay with tight matching \n• 3.3 V, 5 V TTL/CMOS inputs with hysteresis \n• Interl;

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：GALLIUM NITRIDE (GAN) POWER ICS 集成电路（IC） 全半桥驱动器

HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 6.0 Amperes)

VOLTAGE 50 to1000 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • High current capability. • Exceeds environmental standards of MIL-S-19500/228 • Low leakage. • In complia

HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 6.0 Amperes)

VOLTAGE 50 to1000 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • High current capability. • Exceeds environmental standards of MIL-S-19500/228 • Low leakage. • In complia

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

FEATURES • High surge current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002/95/EC directives

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

FEATURES • High surge current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002/95/EC directives

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 600A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 500 • Non-Insulated Type APPLICATION Robotics, Forklifts, Welders