Compact, customizable and configurable reference design for battery operated BLDC/PMSM power tools based on STM32G473 and STDRIVE 101

Features • Input voltage from 12 to 28 V DC (Nominally 21 V) • Output RMS current up to 20A • The board comprises the following key devices: – STM32G473CET6: A high-performance Arm®-based Cortex®-M4 32-bit MCU+FPU in LQFP48 (7x7mm) package. The MCU embeds trigonometric and arithmetic math ac

Triple half-bridge gate driver

Features • Operating voltage from 5.5 to 75 V • 600 mA sink/source current capability • 3.3 V and 5 V control logic • Two input strategies: – ENx/INx with adjustable deadtime generation – INHx/INLx with interlocking • Matched propagation delay for all channels • Very short propagation dela

Triple half-bridge gate driver

STDRIVE101是适用于驱动三相无刷电机的低压栅极驱动器。\n\n 它是一种带有三重半桥栅极驱动器的单晶片，面向N沟道功率MOSFET。每个驱动器的电流能力为600 mA（灌/拉）。它集成了一个低压降线性稳压器，可通过自举电路为低侧和高侧栅极驱动器生成电源电压。\n\n 该器件在低侧和高侧部分均提供欠压锁定（UVLO），可防止电源开关在低效率或危险条件下工作。\n\n 集成在STDRIVE101中的控制逻辑允许两种输入策略（高侧和低侧或启用和PWM驱动信号）。根据DT/MODE引脚选择驱动方式。这两种情况下，互锁或内部产生的死区时间可确保防止交叉传导。\n\n STDRIVE101还具有用 • 工作电压：5.5至75 V \n• 600 mA灌/拉电流能力 \n• 3.3 V和5 V控制逻辑 \n• 两种输入策略： \n •带生成死区时间可调的ENx/INx \n •带互锁的INHx/INLx \n• 面向所有沟道的匹配传播时延 \n• 极短的传输延时：40 ns• 集成自举二极管 \n• 12 V LDO线性稳压器（最大50 mA） \n• 用于每个外部MOSFET的嵌入式VDS监控器 \n• 过流比较器 \n• UVLO和热关断保护 \n• 低电流消耗运行的待机模式;

STDRIVE101 demonstration board for three-phase brushless motors

文件：959.94 Kbytes Page：13 Pages

封装/外壳：24-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：GATE DRIVER 集成电路（IC） 全半桥驱动器

Triple half-bridge gate driver

Features • Operating voltage from 5.5 to 75 V • 600 mA sink/source current capability • 3.3 V and 5 V control logic • Two input strategies: – ENx/INx with adjustable deadtime generation – INHx/INLx with interlocking • Matched propagation delay for all channels • Very short propagation dela

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：GATE DRIVER 集成电路（IC） 全半桥驱动器

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages