N沟道600 V、1.38 Ohm典型值、3.5 A MDmesh DM2功率MOSFET，DPAK封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

N沟道600 V、1.3 Ohm典型值、3.5 A MDmesh M2功率MOSFET，DPAK封装

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600 V, 1.38 (ohm) typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package

文件：817.03 Kbytes Page：15 Pages

Extremely low gate charge

文件：1.0681 Mbytes Page：22 Pages

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters

Short Circuit Rated IGBT

文件：556.04 Kbytes Page：7 Pages

Short Circuit Rated IGBT

文件：615.22 Kbytes Page：8 Pages