丝印代码：4LN80K5；N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a DPAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

丝印代码：4LN80K5；N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features  Industry’s lowest RDS(on) * area  Industry’s best FoM (figure of merit)  Ultra low-gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

丝印代码：4LN80K5；N-channel 800 V, 2.1 Ω typ.,3 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features  Industry’s lowest RDS(on) * area  Industry’s best figure of merit (FoM)  Ultra low-gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

N-channel 800 V, 2.1 廓 typ., 3 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

文件：682 Kbytes Page：14 Pages