| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a | STMICROELECTRONICS 意法半导体 |   | ||
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
25+ |
TO-263-3(D2PAK) |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IBM |
26+ |
BGA |
20000 |
公司只有正品,实单来谈 |
|||
ST/意法 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST/意法 |
06+ |
TO-263 |
4 |
深圳原装无铅现货 |
|||
IBM |
25+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
|||
ST(意法) |
25+ |
TO-263-3(D2PAK) |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IBM |
25+ |
BGA |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
JST/日压 |
2608+ |
/ |
226570 |
一级代理，原装现货 |
|||
ST |
24+ |
SOP-28 |
4127 |
||||
IBM |
16+ |
QFP |
2500 |
进口原装现货/价格优势! |
STD12NM50NG芯片相关品牌
STD12NM50NG规格书下载地址
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STD12NM50NG数据表相关新闻
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2023-5-10STD105N10F7AG
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STD120N4F6 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：2500 封装：TO-252-3
2021-9-18STD110N8F6
製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: SMD/SMT 封裝/外殼: TO-252-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 80 V Id - C連續漏極電流: 80 A Rds On - 漏-源電阻: 6.5 mOhms Vgs - 閘極-源極電壓: - 20 V， + 20 V Vgs th - 門源門限電壓 : 4.5 V
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