High voltage fast switching NPN power transistor

This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in • NPN transistor\n• High voltage capability\n• Low spread of dynamic parameters• Minimum lot-to-lot spread for reliable operation\n• Very high switching speed\n• Integrated anti-parallel collector - emitter diode;

丝印代码：D127D；High voltage fast-switching NPN power transistor

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个