位置:首页 > IC中文资料 > STD11NM60NG

型号 功能描述 生产厂家 企业 LOGO 操作

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip techniq

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip techniq

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

STMICROELECTRONICS

意法半导体

更新时间:2026-5-24 23:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
25+
N/A
20948
样件支持,可原厂排单订货!
STMicroelectronics
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ST全系列
25+23+
TO-220
25845
绝对原装正品全新进口深圳现货
ST/进口原
17+
TO-220F
6200
ST
26+
原厂原封装
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
ST
24+
TO-220-3
959
ST/意法
22+
TO-220F
20000
只做原装 品质保障
ST
24+
TO-220
4000
原装现货热卖
ST
23+
TO220
6996
只做原装正品现货
ST
20+
TO-220F
38900
原装优势主营型号-可开原型号增税票

STD11NM60NG数据表相关新闻

  • STD105N10F7AG

    全新原装现货 支持第三方机构验证

    2022-6-23
  • STD120N4F6 瑞智芯 只有原装

    深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号:STD120N4F6 类别 分立半导体产品 晶体管 - FET,MOSFET - 单个 制造商 STMicroelectronics 包装:2500 封装:TO-252-3

    2021-9-18
  • STD110N8F6

    製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: SMD/SMT 封裝/外殼: TO-252-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 80 V Id - C連續漏極電流: 80 A Rds On - 漏-源電阻: 6.5 mOhms Vgs - 閘極-源極電壓: - 20 V, + 20 V Vgs th - 門源門限電壓 : 4.5 V

    2021-6-9
  • STD13NM60N原装现货

    瀚佳科技(深圳)有限公司 专业进口电子元器件代理商

    2020-8-17
  • STD150NH02LT4原装现货

    瀚佳科技(深圳)有限公司 专业进口电子元器件代理商

    2020-8-17
  • STCU8WMINI

    STC U8W MINI,烧录器,全新原装当天发货或门市自取0755-82732291.

    2019-3-14