N沟道100 V、0.115 Ohm典型值、13 A STripFET II功率MOSFET，DPAK封装

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also • Exceptional dv/dt capability \n• Application oriented characterization;

丝印代码：D10NF10；N-Channel 100-V (D-S) MOSFET

Features @ Ros = 100m @VGS=10V ® Super high density cell design for extremely low RDS(ON) ® Exceptional on-resistance and maximum DC current

N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

文件：458.84 Kbytes Page：14 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.00872 Mbytes Page：7 Pages

100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

文件：458.84 Kbytes Page：14 Pages

N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

文件：458.84 Kbytes Page：14 Pages