Epitaxial planar NPN silicon transistor

Descriptions • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STA9012N

Epitaxial planar NPN silicon transistor

Descriptions\n• General purpose application\n• Switching application • Excellent hFE linearity\n• Complementary pair with STA9012N;

Epitaxial planar NPN silicon transistor

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO: 45 V

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.