NPN POWER TRANSISTORS

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NPN POWER TRANSISTORS

Band-switching diodes

DESCRIPTION Planar high performance band-switching diodes in a glass SOD80 SMD package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.5 pF • Low diode forward resistance: max. 0.7 to 1.2 Ω. APPLICATION • Band-swit

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

SCR

DESCRIPTION The TYN 682 ---> TYN 692 Family Silicon Controlled Rectifiers are high performance glass passivated chips technology. This general purpose Family Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPABILITY

INVERTING VOLTAGE DOUBLER

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INVERTING VOLTAGE DOUBLER

文件：80.51 Kbytes Page：6 Pages