NPN Silicon Transistor

Features •Low saturation switching application •Voltage regulator application •Low saturation : VCE(SAT)=0.4V Max. •High Voltage : VCEO=60V Min.

NPN Silicon Transistor

Features •Low saturation switching application •Voltage regulator application •Low saturation : VCE(SAT)=0.4V Max. •High Voltage : VCEO=60V Min.

NPN Silicon Transistor

•Low saturation switching application \n•Voltage regulator application\n•Low saturation : VCE(SAT)=0.4V Max.\n•High Voltage : VCEO=60V Min.;

Small Signal Transistors

NPN Silicon Transistor

文件：236.14 Kbytes Page：5 Pages

NPN Silicon Transistor

Features •Low saturation switching application •Voltage regulator application •Low saturation : VCE(SAT)=0.4V Max. •High Voltage : VCEO=60V Min.

NPN Silicon Transistor

Descriptions •General purpose amplifier •High voltage application Features •Low saturation switching application •Voltage regulator application •Low saturation: VCE(sat)= 0.4V typ •High voltage : VCEO=60V Min

NPN Silicon Transistor

Features •Low saturation switching application •Voltage regulator application •Low saturation : VCE(SAT)=0.4V Max. •High Voltage : VCEO=60V Min.

NPN Silicon Transistor

Features •Low saturation switching application •Voltage regulator application •Low saturation : VCE(SAT)=0.4V Max. •High Voltage : VCEO=60V Min.

NPN Silicon Transistor

Features Low saturation switching application Voltage regulator application Low saturation : VCE(SAT)=0.4V Max. High Voltage : VCEO=60V Min. Package Code SOT-223

NPN Silicon Transistor

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NPN Silicon Transistor

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Power Transistors

NPN Silicon Transistor

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IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages