P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-323 package.

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Speech Synthesizer LSI with on-chip 384K Mask ROM

GENERAL DESCRIPTION The ML2201 is a PCM-based speech synthesizer LSI having an on-chip 384K Mask ROM, D/A Converter and Low Pass Filter. Utilizing the serial interface enables smaller footprint packaging, which makes the chip an ideal choice for a pre-recorded message subsystem used with tod

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr