HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV3

High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps (CFLS) ■ SMPS for battery charger Description The device is manufactured using high voltage mu

Silicon NPN transistor in a TO-92 Plastic Package.

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High voltage capability,Low spread of dynamic parameters,Very high switching speed. Applications High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：258.12 Kbytes Page：9 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps (CFLS) ■ SMPS for battery charger Description The device is manufactured using high voltage mu

High Voltage NPN Power Transistor

Features ● High breakdown voltage, VCEO=450V (min.) ● High collector current, IC(max)=1.5A (DC) ● Pb-free lead plating package

High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps (CFLS) ■ SMPS for battery charger Description The device is manufactured using high voltage mu

TO-92 Plastic-Encapsulate Transistors

TRANSISTER (NPN) FEATURES ● Medium Voltage Capability ● Low Spread of Dynamic Parameters ● Minimum Lot-to-lot Spread for Reliable Operation ● Very High Switching Speed APPLICATIONS ● Electronic Ballasts for Fluorescent Lighting

High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps (CFLS) ■ SMPS for battery charger Description The device is manufactured using high voltage mu

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV3

High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps (CFLS) ■ SMPS for battery charger Description The device is manufactured using high voltage mu

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：258.12 Kbytes Page：9 Pages

Bipolar Transistor

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：258.12 Kbytes Page：9 Pages

Transistors

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 1.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 1.5A TO92AP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个