STB80NF55价格

参考价格:¥10.0416

型号:STB80NF55-06-1 品牌:STMicroelectronics 备注:这里有STB80NF55多少钱,2025年最近7天走势,今日出价,今日竞价,STB80NF55批发/采购报价,STB80NF55行情走势销售排行榜,STB80NF55报价。
型号 功能描述 生产厂家 企业 LOGO 操作

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

STMICROELECTRONICS

意法半导体

N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 55 V, 6.5 m typ.,80 A STripFETTM Power MOSFETs in D²PAK and TO-220 packages

Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically

STMICROELECTRONICS

意法半导体

N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

STMICROELECTRONICS

意法半导体

N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

STMICROELECTRONICS

意法半导体

N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

文件:449.27 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

文件:449.27 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

文件:449.27 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 55 V, 5 mOhm, 80 A I2PAK STripFET(TM) II Power MOSFET

STMICROELECTRONICS

意法半导体

N沟道55 V、5 mOhm、80 A STripFET(TM) II功率MOSFET,D2PAK封装

STMICROELECTRONICS

意法半导体

Switching application

文件:686.4 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

文件:449.27 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 55 V - 0.0065 廓 - 80 A - TO-220 - D2PAK - TO-247 STripFET??Power MOSFET

文件:358.21 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

STMICROELECTRONICS

意法半导体

N-channel 55 V - 0.0065 廓 - 80 A - TO-220 - D2PAK - TO-247 STripFET??Power MOSFET

文件:358.21 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

文件:449.27 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

STB80NF55产品属性

  • 类型

    描述

  • 型号

    STB80NF55

  • 制造商

    STMicroelectronics

更新时间:2025-10-5 8:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
21+
D2PAK
1000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
ST/意法半导体
25
TO-263-3
6000
原装正品
ST/意法半导体
22+
TO-263-3
6004
原装正品现货 可开增值税发票
ST/意法半导体
21+
TO-263-3
8860
原装现货,实单价优
ST/意法
24+
TO-263
504090
免费送样原盒原包现货一手渠道联系
ST/意法半导体
21+
TO-263-3
8860
只做原装,质量保证
ST/意法半导体
23+
TO-263-3
12820
正规渠道,只有原装!
VBsemi
24+
TO263
11000
原装正品 有挂有货 假一赔十
ST/意法半导体
23+
N/A
20000
ST/意法半导体
23+
TO-263-3
16900
公司只做原装,可来电咨询

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