N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.0085 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175 oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THR

N-Channel 30 V (D-S) 175 째C MOSFET

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-Channel 30 V (D-S) 175 째C MOSFET

文件：1.13698 Mbytes Page：10 Pages

N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

General Description This device employs advanced MOSFET technology and features low gate charge while maintaining low on resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

30V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 60A, 30V. RDS(on)= 0.0135Ω@VGS= 10 V • Low gate charge ( typical 18.5 nC) • Low Crss ( typical 155 pF) • Fa

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

N-Channel Logic Level PWM Optimized Power MOSFET

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