N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET

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N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix H identifies a family optimized for high frequency applications (up to 50kHz)in order

N-CHANNEL 3A - 600V D2PAK Power MESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency

N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMES TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency a