STB12NM50价格

参考价格:¥12.4587

型号:STB12NM50N 品牌:STMicroelectronics 备注:这里有STB12NM50多少钱,2025年最近7天走势,今日出价,今日竞价,STB12NM50批发/采购报价,STB12NM50行情走势销售排行榜,STB12NM50报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STB12NM50

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

STMICROELECTRONICS

意法半导体

STB12NM50

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

STMICROELECTRONICS

意法半导体

STB12NM50

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件:544.65 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

STB12NM50

N-Channel 650 V (D-S) MOSFET

文件:1.040069 Mbytes Page:8 Pages

VBSEMI

微碧半导体

STB12NM50

N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

STMICROELECTRONICS

意法半导体

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

STMICROELECTRONICS

意法半导体

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

STMICROELECTRONICS

意法半导体

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mos

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.29 廓, 11 A, FDmesh??II Power MOSFET (with fast diode), D2PAK, DPAK

Description FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced on resistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. ■ 100 avalanche tested ■ Low i

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

STMICROELECTRONICS

意法半导体

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件:544.65 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件:358.36 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:313.72 Kbytes Page:2 Pages

ISC

无锡固电

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件:466.66 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件:466.66 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件:466.66 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件:588.5 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.04006 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件:588.5 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件:313.32 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件:1.04005 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

文件:1.03153 Mbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package

STMICROELECTRONICS

意法半导体

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

文件:1.03153 Mbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件:544.65 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 300 mOhm typ., 12 A MDmesh Power MOSFET in a D2PAK package

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.04003 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件:544.65 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.039369 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件:588.5 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件:544.65 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件:466.66 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

STB12NM50产品属性

  • 类型

    描述

  • 型号

    STB12NM50

  • 制造商

    STMicroelectronics

更新时间:2025-10-4 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
2511
9550
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
STM
23+
TO-263-3 (D2PAK)
50000
原装正品 支持实单
ST
24+
TO-263
6000
全新原装深圳仓库现货有单必成
ST/意法
23+
D2PAK
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
ST/意法
24+
TO-263
4
只做原厂渠道 可追溯货源
ST
21+
TO-263
10000
勤思达只做原装 现货库存 支持支持实单
ST
23+
TO-263
10000
正规渠道,只有原装!
ST(意法半导体)
2447
TO-263-2
105000
1000个/圆盘一级代理专营品牌!原装正品,优势现货,
ST/意法
23+
NA
12730
原装正品代理渠道价格优势

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