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STB12NM50价格
参考价格：￥12.4587
型号：STB12NM50N 品牌：STMicroelectronics 备注：这里有STB12NM50多少钱，2025年最近7天走势，今日出价，今日竞价，STB12NM50批发/采购报价，STB12NM50行情走势销售排行榜，STB12NM50报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STB12NM50 | N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a | STMICROELECTRONICS 意法半导体 |   | |
STB12NM50 | N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of | STMICROELECTRONICS 意法半导体 | | |
STB12NM50 | N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET 文件：544.65 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | |
STB12NM50 | N-Channel 650 V (D-S) MOSFET 文件：1.040069 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a | STMICROELECTRONICS 意法半导体 | | ||
N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mos | STMICROELECTRONICS 意法半导体 | | ||
N-channel 500 V, 0.29 廓, 11 A, FDmesh??II Power MOSFET (with fast diode), D2PAK, DPAK Description FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced on resistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. ■ 100 avalanche tested ■ Low i | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor 文件：358.36 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET 文件：544.65 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor 文件：313.72 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode) 文件：466.66 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode) 文件：466.66 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode) 文件：466.66 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP 文件：588.5 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.04006 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP 文件：588.5 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor 文件：313.32 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.04005 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP 文件：1.03153 Mbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP 文件：1.03153 Mbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET 文件：544.65 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.04003 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET 文件：544.65 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.039369 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP 文件：588.5 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET 文件：544.65 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode) 文件：466.66 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | |
STB12NM50产品属性
- 类型
描述
- 型号
STB12NM50
- 制造商
STMicroelectronics
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ST/意法 |
24+ |
TO-263 |
504166 |
免费送样原盒原包现货一手渠道联系 |
|||
ST(意法半导体) |
24+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ST/意法 |
24+ |
TO-263 |
4 |
只做原厂渠道 可追溯货源 |
|||
ST |
24+ |
TO-263-3 |
9592 |
只做原装/假一赔十/安心咨询 |
|||
ST |
24+ |
TO-252 |
6430 |
原装现货/欢迎来电咨询 |
|||
STMICROELEC |
24+ |
原封装 |
675 |
原装现货假一罚十 |
|||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268481邹小姐 |
|||
ST/意法 |
24+ |
TO263 |
60000 |
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