Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

Mosfets

662 Series D-Sub Connectors | .109(2.77mm) Contact Spacing x .112(2.84mm) Row Spacing | Receptacle over Receptacle | Dual Port | Right Angle

Features Two Contact Rows per connector with Right Angle Bend .109(2.77mm) Contact Spacing x .112(2.84mm) Row Spacing Plug and Receptacle in 9, 15, 25 or 37 Contact Sizes Pin and Socket Contact Mating Design with P.C. Tail Termination Metal Shell Provides EMI/RFI Shielding, Plug Sh

LC2MOS Precision 5 V Quad SPST Switches

GENERAL DESCRIPTION The ADG661, ADG662 and ADG663 are monolithic CMOS devices comprising four independently selectable switches. These switches feature low, well-controlled on resistance and wide analog signal range, making them ideal for precision analog signal switching. FEATURES +5 V, 65

LC2MOS Precision 5 V Quad SPST Switches

GENERAL DESCRIPTION The ADG661, ADG662 and ADG663 are monolithic CMOS devices comprising four independently selectable switches. These switches feature low, well-controlled on resistance and wide analog signal range, making them ideal for precision analog signal switching. FEATURES +5 V, 65

Axial Lead and Cartridge Fuses - Subminiature

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Discriminator

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