150 W, 510 V Transient Voltage Suppressors

• Hermetically Sealed\n• Low Reverse Leakage\n• Voltage up to 510V\n• Ultra Miniature\n• TX, TXV, and Space Level Screening Available\n• 5 Times Greater Surge Than JAN1N3016 Series\n• ¼ Size of conventional 1 W Zeners;

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load va

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load va

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load va

NPN epitaxial planer transistor

NPN epitaxial planer transistor For amplification of low frequency output ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For amplification of low frequency output ■ Features ● High emitter to base voltage VEBO. ● High forward current transfer ratio hFE. ● Low ON resistor Ron.