NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

TRANSISTOR (NPN)

FEATURES Excellent hFE Linearity Low Noise.

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity :hFE(2)=100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). ● Low noise:NF=1Db(Typ).at f=1KHz. ● Complementary pair with 2SA1980S. APPLICATIONS ● General small signal amplifier.

General small signal amplifier

Description • General small signal amplifier Features • Low collector saturation voltage: VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980

NPN Transistor Plastic-Encapsulate Transistors

FEATURE
Excellent hFE Linearity
Low Noise