NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980E

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980SF

NPN Silicon Transistor (General small signal amplifier)

Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980UF

NPN Silicon Transistor (General small signal amplifier)

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