P Channel Enhancement Mode MOSFET

DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

P Channel Enhancement Mode MOSFET

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P Channel Enhancement Mode MOSFET

DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

SOT-23 package design

DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage appl

P-Channel 30 V (D-S) MOSFET

文件：1.04848 Mbytes Page：9 Pages

Tranch MOSFET

P Channel Enhancement Mode MOSFET

文件：607.49 Kbytes Page：6 Pages

Tranch MOSFET

Silicon Complementary Transistors Darlington Driver

Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.

LinCMOSE PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：748.45 Kbytes Page：51 Pages

LinCMOSE PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：748.45 Kbytes Page：51 Pages

LinCMOSE PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：748.45 Kbytes Page：51 Pages

LinCMOSE PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：748.45 Kbytes Page：51 Pages