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型号 功能描述 生产厂家 企业 LOGO 操作
SSW7N60

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FAIRCHILD

仙童半导体

SSW7N60

N-Channel 650V (D-S)Power MOSFET

文件:1.10909 Mbytes Page:10 Pages

VBSEMI

微碧半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件:362.09 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:362.09 Kbytes Page:2 Pages

ISC

无锡固电

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP7N60E is supplied

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX7N60E is supplied

PHILIPS

飞利浦

SSW7N60产品属性

  • 类型

    描述

  • 型号

    SSW7N60

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    600V N-Channel MOSFET

更新时间:2026-8-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
D2PAK
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi(安森美)
25+
D2PAK
12369
样件支持,可原厂排单订货!
FSC
01+
TO-263
7200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD/仙童
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
FAIRCHILD/仙童
01+
TO-263
7200
FAIRCHILDSEMICONDUCTOR
26+
NA
30000
房间原装现货特价热卖,有单详谈
SAMSUNG
25+
NA
736
专做原装正品,假一罚百!
FSC
25+23+
TO-263
28685
绝对原装正品全新进口深圳现货
FSC/ON
26+
原包装原封 □□
697
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
FAIRCHILDSEMICONDUCTOR
26+
NA
697
电子元器件供应原装现货. 优质独立分销。原厂核心渠道

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