位置：首页 > IC中文资料第12919页 > SST29EE010A-90-4I-N
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST29EE010A-90-4I-N | 1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc |   | |
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | |
SST29EE010A-90-4I-N产品属性
- 类型
描述
- 型号
SST29EE010A-90-4I-N
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
1 Megabit(128K x 8) Page Mode EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
2026+ |
PLCC |
996880 |
只做原装,欢迎来电资询 |
|||
SST |
436 |
PLCC |
410 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
SST |
22+ |
PLCC32 |
20000 |
公司只做原装 品质保证 |
|||
SST |
22+ |
PLCC |
2000 |
原装正品现货 |
|||
SST |
24+ |
PLCC32 |
5000 |
全新原装正品,现货销售 |
|||
24+ |
50 |
本站现库存 |
|||||
SST |
17+ |
TSOP32 |
6200 |
100%原装正品现货 |
|||
SST |
04+ |
PLCC |
4200 |
原装现货价格有优势量多可发货 |
|||
SST |
23+ |
PLCC |
98900 |
原厂原装正品现货!! |
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2019-8-29
DdatasheetPDF页码索引
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