型号 功能描述 生产厂家 企业 LOGO 操作

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

1 Mbit (128K x8) Page-Write EEPROM

文件:458.14 Kbytes Page:30 Pages

SST

Silicon Storage Technology, Inc

SST29EE010-70产品属性

  • 类型

    描述

  • 型号

    SST29EE010-70

  • 功能描述

    闪存 128K X 8 70ns

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2026-1-3 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP
23+
TSOP
50000
全新原装正品现货,支持订货
SSTI
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
MICROCHIP
三年内
1983
只做原装正品
MICROCHIP
23+
TSOP
900
正规渠道,只有原装!
SST
23+
TSOP32
50000
全新原装正品现货,支持订货
SST
2024+
TSSOP-32
50000
原装现货
SST
24+
TSOP
48000
特价特价100原装长期供货.
SST
00+
TSOP32
458
全新原装100真实现货供应
SST
PLCC
320
正品原装--自家现货-实单可谈
SST
22+
PLCC
8000
原装现货库存.价格优势

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