P-Channel Enhancement Mode Power Mos.FET

Description The SST2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. industrial surface mount application and suited for low The SST2603 is universally used for all commercial voltage applications such as

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

P-Channel Enhancement Mode Power Mos.FET

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

2.8V PCS UPCONVERTER

Product Description The RF2603 is a upconverter/pre-driver designed for PCS systems. The device features single-ended IF and LO inputs and single-ended RF output for ease of interface. The RF2603 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and i

6-CHANNEL SERIAL INTERFACE LOW-SIDE DRIVER

文件：243.77 Kbytes Page：17 Pages

6-CHANNEL SERIAL INTERFACE LOW-SIDE DRIVER

文件：243.77 Kbytes Page：17 Pages

6-CHANNEL SERIAL INTERFACE LOW-SIDE DRIVER

文件：243.77 Kbytes Page：17 Pages