N-Channel Enhancement Mode Power Mos.FET

Description The SST2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST2602 is universally used for all commercial-industrial applications. Features * Low On-Resistance * Capable of 2.5V Gate Drive

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

N-Channel Enhancement Mode Power Mos.FET

High CMR, High Speed TTL Compatible Optocouplers

Description The 6N137, HCPL-26XX/06XX/4661, HCNW137/26X1 are optically coupled gates that combine a GaAsP light emitting diode and an integrated high gain photo detector. An enable input allows the detector to be strobed. The output of the detector IC is an open collector Schottky clamped transi

HCMOS Compatible, High CMR, 10 MBd Optocouplers

Description The HCPL-261A family of optically coupled gates shown on this data sheet provide all the benefits of the industry standard 6N137 family with the added benefit of HCMOS compatible input current. This allows direct interface to all common circuit topologies without additional LED buffer

Darlington Phototransistor

Darlington Phototransistor For optical control systems Features ● Darlington output, high sensitivity ● Easy to combine light emission and photodetection on same printed circuit board ● Small size, thin side-view type package ● Long lead and visible light cutoff design with PN205

RF POWER AMPLIFIER

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Darlington Phototransistor

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