N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V an

N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V an

HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

FAST DMOS FET Switches N-Channel Enhancement-Mode

DESCRIPTION Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance SPST analog switch. Utilizing Calogic’s proprietary DMOS processing the SST211 Series features an integrated zener diode designed to protect the gate from electrical ove

FAST DMOS FET Switches N-Channel Enhancement-Mode

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N-Channel Lateral DMOS FETs

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N-Channel DMOS Switch - Zener Protected

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UHF variable capacitance diode

DESCRIPTION The BB215 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD80 glass SMD package. FEATURES • Excellent linearity • Matched to 3 • Small hermetically sealed glass SMD package • C28: 2 pF; ratio: 8.3 • Low series resistance. APPLICATIONS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

Small Outline Optoisolators Transistor Output (Low Input Current) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high densi

Silicon NPN Transistor Darlington Driver

Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic