Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS= 600V Lower RDS(ON) : 2.037Ω (Typ.) W m

isc N-Channel MOSFET Transistor

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4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps竊?00Volts N-Channel MOSFET

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4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

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N-CHANNEL POWER MOSFET

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