100V N-Channel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

Advanced Process Technology

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

Advanced MOSFETprocess technology

Features and Benefits:  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: t utilizes the latest

Advanced Power MOSFET

Advanced Power MOSFET BVDSS= 600 V RDS(on) = 0.8 ID= 5.1 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 (Max.) @ VDS= 600V Low RDS(ON) : 0.646 (T

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

Extremely low switching loss

Features and Benefits  Low RDS(on)&FOM  Extremely low switching loss  Excellent stability and uniformity  Fast switching and reverse body recovery  150℃ operating temperature Applications  Consumer electronic power supply  Motor control  Synchronous-rectification  Isolated DC/

Advanced MOSFETprocess technology

Features and Benefits:  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the lates

8-Bit Multiplying D/A Converter

FUNCTIONAL DESCRIPTION

8-Bit Multiplying D/A Converter

FUNCTIONAL DESCRIPTION

8-Bit Multiplying D/A Converter

FUNCTIONAL DESCRIPTION

8-Bit Multiplying D/A Converter

FUNCTIONAL DESCRIPTION

8-Bit Multiplying D/A Converter

FUNCTIONAL DESCRIPTION

8-Bit Multiplying D/A Converter

FUNCTIONAL DESCRIPTION

Advanced MOSFET process technology

Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the late

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

24.125 GHz Doppler Sensor Head, Dual Channel, Short Range

FEATURES 24.125 GHz Operation Low Flicker Noise and High Sensitivity Low Harmonic Emission APPLICATIONS Traffic Management Systems Law Enforcement Military Surveillance Systems

24.125 Ghz Doppler Sensor Head, Dual Channel, Medium Range

FEATURES 24.125 GHz Operation Low Flicker Noise and High Sensitivity Low Harmonic Emission APPLICATIONS Traffic Management Systems Law Enforcement Military Surveillance Systems

24 GHz Doppler Sensor Head, Dual Channel

Description: Model SSS-24307-27M-D1 is a K Band, microstrip antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 24 GHz and takes a nominal bias of +5.0 VDC/250 mA. The

24.125 GHz Doppler Sensor Head, Dual Channel, Short Range

FEATURES 24.125 GHz Operation Low Flicker Noise and High Sensitivity Low Harmonic Emission APPLICATIONS Traffic Management Systems Law Enforcement Military Surveillance Systems

24.125 GHz Doppler Sensor Head, Dual Channel, Long Range

Description: Model SSS-24310-22L-D1 is K Band, lens antenna-based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 24.125 GHz and takes a nominal bias of +5.0 VDC/250 mA. The senso

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 600V Lower RDS(ON) : 3.892 W (Typ.)

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

34.3 GHz Doppler Sensor Head, Dual Channel

Description: Model SSS-34300-28L-D1 is a Ka Band, Doppler sensor head that is designed and manufactured for measurements of a moving target's speed and direction. The sensor module has a center frequency of 34.3 GHz and takes a nominal bias of +5.0 VDC/350 mA. The sensor module is configured with

35.00 GHz Doppler Sensor Head, Dual Channel, Long Range

Description: Model SSS-35300-29L-D1 is Ka Band, lens antenna-based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/250 mA. The sen

35.00 GHz Doppler Sensor Head, Single Channel, Long Range

Description: Model SSS-35300-29L-S1 is Ka Band, lens antenna-based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/250 mA. The sensor heads are

34.850 GHz High Performance Doppler Sensor Head, Single Channel

Description: Model SSS-35307-20M-S1 is a Ka Band, microstrip antenna-based Doppler sensor head that is designed and manufactured for medium range measurements of a moving target's speed. The sensor head has a center frequency of 34.85 GHz and takes a nominal bias of +5.0 VDC/250 mA. The sens

35.00 GHz Doppler Sensor Head, Dual Channel, Long Range

Description: Model SSS-35310-22L-D1 is Ka Band, lens antenna-based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.5 VDC/350 mA. The sen

35 GHz Doppler Sensor Head, Dual Channel, Long Range

Description: Model SSS-35310-22L-D2 is Ka Band lens antenna-based Doppler sensor head that is designed and manufactured for long range moving target speed and direction detection applications. The operation frequency of the sensor head is at 35 GHz. The sensor head is configured with a lens

35.00 GHz Doppler Sensor Head, Single Channel, Long Range

Description: Model SSS-35310-22L-S1 is Ka Band, lens antenna-based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/250 mA. The sensor heads are

35.00 GHz Doppler Sensor Head, Dual Channel, Long Range

Description: Model SSS-35310-29L-D1 is Ka Band, lens antenna-based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/250 mA. The sen

35 GHz Doppler Sensor Head, Dual Channel, Long Range

Description: Model SSS-35310-29L-D2 is Ka Band lens antenna based Doppler sensor head that is designed and manufactured for long range moving target speed and direction detection applications. The operation frequency of the sensor head is at 35 GHz. The sensor head is configured with a lens corre

35.00 GHz Doppler Sensor Head, Single Channel, Long Range

Description: Model SSS-35310-29L-S1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/250 mA. The sensor heads are confi

35.00 GHz Doppler Sensor Head, Dual Channel, Long Range, 15 dBm

Description: Model SSS-35315-22L-D1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.5 VDC/350 mA. The sensor h

35.00 GHz Doppler Sensor Head, Single Channel, Long Range, 15 dBm

Description: Model SSS-35315-22L-S1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/350 mA. The sensor heads are confi

35 GHz Doppler Sensor Head, Dual Channel, Long Range, 15 dBm

Description: Model SSS-35315-29L-D1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/350 mA. The sensor h

35 GHz Doppler Sensor Head, Single Channel, Long Range, 15 dBm

Description: Model SSS-35315-29L-S1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/350 mA. The sensor heads are confi

35 GHz Doppler Sensor Head, Dual Channel, Long Range, 17 dBm

Description: Model SSS-35317-29L-D1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/350 mA. The sensor h

35 GHz Doppler Sensor Head, Single Channel, Long Range, 17 dBm

Description: Model SSS-35317-29L-S1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/350 mA. The sensor heads are confi

35.00 GHz Doppler Sensor Head, Dual Channel, Long Rangenull

Description: Model SSS-35320-22L-D1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/650 mA. The sensor h

35.00 GHz Doppler Sensor Head, Single Channel, Long Range

Description: Model SSS-35320-22L-S1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/650 mA. The sensor heads are confi

35 GHz Doppler Sensor Head, Dual Channel, Long Range, 20 dBm

Description: Model SSS-35320-29L-D1 is Ka Band, lens antenna-based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed and direction. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/650 mA. The sensor h

35 GHz Doppler Sensor Head, Single Channel, Long Range, 20 dBm

Description: Model SSS-35320-29L-S1 is Ka Band, lens antenna based Doppler sensor head that is designed and manufactured for long range measurements of a moving target's speed. The sensor head has a center frequency of 35 GHz and takes a nominal bias of +5.0 VDC/650 mA. The sensor heads are confi

Advanced MOSFETprocess technology

Main Features  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description It utilizes the latest processi

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS= 600V Lower RDS(ON) : 2.037Ω (Typ.) W m

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

Advanced Power MOSFET

BVDSS = 600 V RDS(on) = 2.2Ω ID = 2.6 A FEATURES Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 μA (Max.) @ VDS = 600V Lower RDS(

N CHANNEL POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.2A@ TC=25℃ · Drain Source Voltage -VDSS= 550V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.