位置：首页 > IC中文资料 > SSRF02N65SL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SSRF02N65SL | N-Ch Enhancement Mode Power MOSFET 文件：577.95 Kbytes Page：5 Pages | SECOS 喜可士 |   | |
SSRF02N65SL | MosFET | SECOS 喜可士 | | |
N-Ch Enhancement Mode Power MOSFET 文件：577.95 Kbytes Page：5 Pages | SECOS 喜可士 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126F package. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
- |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SECOS |
20+ |
TO-220F |
32500 |
现货很近!原厂很远!只做原装 |
|||
SECOS |
2022+ |
TO-220F |
32500 |
原厂代理 终端免费提供样品 |
|||
Secos |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
SSRF02N65SL规格书下载地址
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DdatasheetPDF页码索引
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