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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
N-Channel650V(D-S)MOSFET 文件：1.84713 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：659.64 Kbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
infineon |
2020+ |
P-TO220-3-31 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
INFINEON |
23+ |
TO-220F |
20000 |
原厂原装正品现货 |
|||
INFINEON/英飞凌 |
22+ |
TO-220F |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
Infineon(英飞凌) |
23+ |
NA |
9048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON |
22+ |
TO-220F-3 |
15000 |
原装正品，实单请联系 |
|||
INFINEO |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
||||
INFINEON |
23+ |
TO-220 |
5000 |
原装正品!假一罚十! |
|||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
21+ |
TO-220 |
12000 |
进口原装正品现货 |
|||
Infineon/英飞凌 |
2017+ |
TO-220F |
75000 |
原装正品现货,可开13点税 |
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