Field-Effect Transistor Silicon N-Channel MOS Type

○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • N-ch 2-in-1 • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V)

Small Low ON resistance MOSFETs

Polarity：N-ch×2\nInternal Connection：Independent\nComponent Product (Q1)：SSM3K35MFV\nComponent Product (Q2)：SSM3K35MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID 0.18 A \nDrain-Source voltage (Q1) VDSS 20 V \nGate-Source voltage (Q1) VGSS ±10 V \nDrain current (Q2) ID 0.18 A \nDrain-Source voltage (Q2) VDSS 20 V \nGate-Source voltage (Q2) VGSS ±10 V \nPower Dissipation PD 0.15 W ;

丝印代码：DX；High-Speed Switching Analog Switches

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丝印代码：DX；High-Speed Switching

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丝印代码：KZ；High-Speed Switching Applications

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