High-Speed Switching Applications

○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.8 V drive • Low ON-resistance: Ron = 145 mΩ (max) (@VGS = 1.8V) Ron = 101 mΩ (max) (@VGS = 2.5V) Ron = 85 mΩ (max) (@VGS = 4.0V)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

丝印代码：KL；MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching • Power Management Switches 2. Features (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V)

Small Low ON resistance MOSFETs

Polarity：N-ch\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 2.3 A \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-12 V ;

MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching • Power Management Switches 2. Features (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V)

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

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