TOSHIBAFIELDEFFECTTRANSISTORSILICONNCHANNELMOSTYPE

HighSpeedSwitchingApplications •Smallpackage •Lowonresistance:Ron=0.8Ω(max)(@VGS=4V) :Ron=1.2Ω(max)(@VGS=2.5V) •Lowgatethresholdvoltage

HighSpeedSwitchingApplications

文件：152.26 Kbytes Page：5 Pages

HighSpeedSwitchingApplications

文件：152.26 Kbytes Page：5 Pages

PowerFieldEffectTransistors

PowerFieldEffectTransistors N-ChannelEnhancementModeSiliconGate DPAKforSurfaceMountorInsertionMount

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N-CHANNELENHANCEMENTMODESILICONGATE

文件：112.54 Kbytes Page：2 Pages