TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

High Speed Switching Applications • Small package • Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) • Low gate threshold voltage

High Speed Switching Applications

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

High Speed Switching Applications

文件：152.26 Kbytes Page：5 Pages

Power Field Effect Transistors

Power Field Effect Transistors N-Channel Enhancement Mode Silicon Gate DPAK for Surface Mount or Insertion Mount

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL ENHANCEMENT MODE SILICON GATE

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