MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS =

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS =

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS =

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS =

MOSFETs Silicon P-Channel MOS (U-MOS??

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