Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V)

P−CHANNEL MOSFET

FEATURES VDS (V) = -30V RDS(ON) 46m (VGS = -10V) RDS(ON) 54m (VGS = -4.5V) APPLICATIONS For Mobile Computing Load Switch Notebook Adaptor Switch DC/DC Converter

P−CHANNEL MOSFET

FEATURES VDS (V) = -30V RDS(ON)

Small Low ON resistance MOSFETs

Power Management Switch Applications

文件：216.21 Kbytes Page：6 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.04867 Mbytes Page：9 Pages

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V)