PowerManagementSwitchApplications

○PowerManagementSwitchApplications •1.5-Vdrive •LowON-resistance:RDS(ON)=88.4mΩ(max)(@VGS=-1.5V) RDS(ON)=56.0mΩ(max)(@VGS=-1.8V) RDS(ON)=39.7mΩ(max)(@VGS=-2.5V)

MOSFETsSiliconP-ChannelMOS(U-MOSVI)

Applications •PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=88.4mΩ(max)(@VGS=-1.5V) RDS(ON)=56.0mΩ(max)(@VGS=-1.8V) RDS(ON)=39.7mΩ(max)(@VGS=-2.5V) RDS(ON)=29.8mΩ(max)(@VGS=-4.5V)

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

MOSFETsSiliconP-ChannelMOS(U-MOSVI)

Applications •PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=88.4mΩ(max)(@VGS=-1.5V) RDS(ON)=56.0mΩ(max)(@VGS=-1.8V) RDS(ON)=39.7mΩ(max)(@VGS=-2.5V) RDS(ON)=29.8mΩ(max)(@VGS=-4.5V)

TOSHIBAField-EffectTransistorSiliconP-ChannelMOSType(U-MOSVI)

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