MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS

丝印代码：AJN；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS

丝印代码：AJN；MOSFETs Silicon P-Channel MOS (U-MOS??

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